JPS6146078B2 - - Google Patents

Info

Publication number
JPS6146078B2
JPS6146078B2 JP55169889A JP16988980A JPS6146078B2 JP S6146078 B2 JPS6146078 B2 JP S6146078B2 JP 55169889 A JP55169889 A JP 55169889A JP 16988980 A JP16988980 A JP 16988980A JP S6146078 B2 JPS6146078 B2 JP S6146078B2
Authority
JP
Japan
Prior art keywords
layer
light
concentration
light absorption
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55169889A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5793585A (en
Inventor
Fukunobu Aisaka
Tatsuaki Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15894830&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6146078(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55169889A priority Critical patent/JPS5793585A/ja
Priority to US06/326,119 priority patent/US4481523A/en
Priority to DE8181305658T priority patent/DE3176503D1/de
Priority to EP85101755A priority patent/EP0156156A1/en
Priority to EP81305658A priority patent/EP0053513B1/en
Publication of JPS5793585A publication Critical patent/JPS5793585A/ja
Publication of JPS6146078B2 publication Critical patent/JPS6146078B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP55169889A 1980-12-02 1980-12-02 Semiconductor photoreceiving element Granted JPS5793585A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55169889A JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element
US06/326,119 US4481523A (en) 1980-12-02 1981-11-30 Avalanche photodiodes
DE8181305658T DE3176503D1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes
EP85101755A EP0156156A1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes
EP81305658A EP0053513B1 (en) 1980-12-02 1981-12-01 Avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169889A JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Publications (2)

Publication Number Publication Date
JPS5793585A JPS5793585A (en) 1982-06-10
JPS6146078B2 true JPS6146078B2 (en]) 1986-10-11

Family

ID=15894830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169889A Granted JPS5793585A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Country Status (4)

Country Link
US (1) US4481523A (en])
EP (2) EP0053513B1 (en])
JP (1) JPS5793585A (en])
DE (1) DE3176503D1 (en])

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5854685A (ja) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> アバランシ・ホトダイオ−ド及びその製造方法
KR900000074B1 (ko) * 1981-10-02 1990-01-19 미쓰다 가쓰시게 광 검출용 반도체장치
FR2518817A1 (fr) * 1981-12-23 1983-06-24 Thomson Csf Photodiode a zones d'absorption et d'avalanche separees
JPS58154276A (ja) * 1982-03-10 1983-09-13 Nippon Telegr & Teleph Corp <Ntt> アバランシフオトダイオ−ド
DE3227263C2 (de) * 1982-07-21 1984-05-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer planaren Avalanche-Fotodiode mit langwelliger Empfindlichkeitsgrenze über 1,3 &mu;
JPS5984589A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd アバランシフオトダイオード
JPS5994474A (ja) * 1982-11-19 1984-05-31 Nec Corp ヘテロ接合光検出器
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
US4611388A (en) * 1983-04-14 1986-09-16 Allied Corporation Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor
EP0150564A3 (en) * 1983-10-26 1986-05-14 AT&T Corp. Electronic device comprising a heterojunction
US4651187A (en) * 1984-03-22 1987-03-17 Nec Corporation Avalanche photodiode
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
CA1228661A (en) * 1984-04-10 1987-10-27 Rca Inc. Avalanche photodetector
CA1228663A (en) * 1984-04-10 1987-10-27 Paul P. Webb Photodetector with isolated avalanche region
CA1228662A (en) * 1984-04-10 1987-10-27 Paul P. Webb Double mesa avalanche photodetector
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS611064A (ja) * 1984-05-31 1986-01-07 Fujitsu Ltd 半導体受光装置
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
FR2581482B1 (fr) * 1985-05-03 1987-07-10 Labo Electronique Physique Photodiode pin a faible courant de fuite
US4700209A (en) * 1985-10-30 1987-10-13 Rca Inc. Avalanche photodiode and a method of making same
JPS62259481A (ja) * 1986-04-15 1987-11-11 Fujitsu Ltd 半導体受光装置
EP0283699B1 (en) * 1987-03-23 1994-06-15 Hitachi, Ltd. Photoelectric conversion device
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode
JP2664158B2 (ja) * 1987-08-24 1997-10-15 株式会社日立製作所 半導体受光装置の製造方法
US4857982A (en) * 1988-01-06 1989-08-15 University Of Southern California Avalanche photodiode with floating guard ring
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
WO1991002381A1 (fr) * 1989-08-04 1991-02-21 Canon Kabushiki Kaisha Convertisseur photoelectrique
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JPH03270277A (ja) * 1990-03-20 1991-12-02 Fujitsu Ltd 半導体受光素子
US6515315B1 (en) * 1999-08-05 2003-02-04 Jds Uniphase, Corp. Avalanche photodiode for high-speed applications
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
JP4170004B2 (ja) * 2002-03-28 2008-10-22 日本板硝子株式会社 化合物半導体積層膜構造
US7135715B2 (en) * 2004-01-07 2006-11-14 Cree, Inc. Co-doping for fermi level control in semi-insulating Group III nitrides
JP2006237186A (ja) * 2005-02-24 2006-09-07 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP4956944B2 (ja) * 2005-09-12 2012-06-20 三菱電機株式会社 アバランシェフォトダイオード
US7553734B2 (en) * 2005-10-17 2009-06-30 Princeton Lightwave, Inc. Method for forming an avalanche photodiode
JP2007129033A (ja) * 2005-11-02 2007-05-24 Nippon Sheet Glass Co Ltd アバランシェフォトダイオードおよびその製造方法
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
FR2906082B1 (fr) * 2006-09-18 2008-10-31 Commissariat Energie Atomique Photodiode a avalanche
JP4520480B2 (ja) * 2007-03-29 2010-08-04 住友電工デバイス・イノベーション株式会社 受光素子の製造方法
FR2938374B1 (fr) * 2008-11-10 2011-02-11 Commissariat Energie Atomique Photodetecteur a gain interne et detecteur comportant une matrice de tels photodetecteurs
JP2010268000A (ja) * 2010-08-11 2010-11-25 Go Foton Holdings Inc アバランシェフォトダイオードおよびその製造方法
US9917156B1 (en) 2016-09-02 2018-03-13 IQE, plc Nucleation layer for growth of III-nitride structures
RU2654386C1 (ru) * 2016-12-27 2018-05-17 Акционерное общество "НПО "Орион" Способ изготовления планарного лавинного фотодиода
CN109841701B (zh) * 2017-11-24 2021-09-10 比亚迪半导体股份有限公司 光电二极管及其制造工艺
US11322639B2 (en) * 2020-04-09 2022-05-03 Globalfoundries U.S. Inc. Avalanche photodiode
US11316064B2 (en) 2020-05-29 2022-04-26 Globalfoundries U.S. Inc. Photodiode and/or PIN diode structures
US11611002B2 (en) 2020-07-22 2023-03-21 Globalfoundries U.S. Inc. Photodiode and/or pin diode structures
US11424377B2 (en) 2020-10-08 2022-08-23 Globalfoundries U.S. Inc. Photodiode with integrated, light focusing element
US12310124B2 (en) 2022-03-30 2025-05-20 Globalfoundries U.S. Inc. Photodiodes
US11949034B2 (en) 2022-06-24 2024-04-02 Globalfoundries U.S. Inc. Photodetector with dual doped semiconductor material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode
FR2408915A1 (fr) * 1977-11-10 1979-06-08 Thomson Csf Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation
JPS54124991A (en) * 1978-03-23 1979-09-28 Fujitsu Ltd Semiconductor luminous unit
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
JPS5654080A (en) * 1979-10-08 1981-05-13 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Also Published As

Publication number Publication date
DE3176503D1 (en) 1987-12-03
EP0053513B1 (en) 1987-10-28
EP0156156A1 (en) 1985-10-02
JPS5793585A (en) 1982-06-10
EP0053513A2 (en) 1982-06-09
US4481523A (en) 1984-11-06
EP0053513A3 (en) 1983-01-19

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